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MessagePosté le: Sam 21 Mai - 08:18 (2016)    Sujet du message: Operation And Modeling Of The Mos Transistor Pdf Downlo... Répondre en citant




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General,,,Analysis,,,of,,,the,,,Two-Terminal,,,MOS,,,StructureDBody-Referenced,,,Modeling4.11,,,Effective,,,Mobility4.12,,,Effect,,,of,,,Extrinsic,,,Source,,,and,,,Drain,,,Series,,,Resistances4.13,,,Temperature,,,Effects4.14,,,Breakdown4.15,,,The,,,p-Channel,,,MOS,,,Transistor4.16,,,Enhancement-Mode,,,and,,,Depletion-Mode,,,Transistors4.17,,,Model,,,Parameter,,,Values,,,,Model,,,Accuracy,,,,and,,,Model,,,ComparisonReferencesProblemsCHAPTER,,,5:,,,SMALL-CHANNEL,,,AND,,,THIN,,,OXIDE,,,EFFECTS5.1,,,Introduction5.2,,,Carrier,,,Velocity,,,Saturation5.3,,,Channel,,,Length,,,Modulation5.4,,,Charge,,,Sharing5.4.1,,,Introduction5.4.2,,,Short-Channel,,,Devices5.4.3,,,Narrow-Channel,,,Devices5.4.4,,,Limitations,,,of,,,Charge-Sharing,,,Models5.5,,,Drain-Induced,,,Barrier,,,Lowering5.6,,,Punchthrough5.7,,,Combining,,,Several,,,Small-Dimension,,,Effects,,,into,,,One,,,Model--A,,,Strong-Inversion,,,Example5.8,,,Hot,,,Carrier,,,Effects;,,,Impact,,,Ionization5.9,,,Velocity,,,Overshoot,,,and,,,Ballistic,,,Operation5.10,,,Polysilicon,,,Depletion5.11,,,Quantum,,,Mechanical,,,Effects5.12,,,DC,,,Gate,,,Current5.13,,,Junction,,,Leakage;,,,Band-to-Band,,,Tunneling;,,,GIDL5.14,,,Leakage,,,Currents--Particular,,,Cases5.15,,,The,,,Quest,,,for,,,Ever-Smaller,,,Devices5.15.1,,,Introduction5.15.2,,,Classical,,,Scaling5.15.3,,,Modern,,,ScalingReferencesProblemsCHAPTER,,,6:,,,LARGE-SIGNAL,,,MODELING,,,OF,,,THE,,,MOS,,,TRANSISTOR,,,IN,,,TRANSIENT,,,OPERATION6.1,,,Introduction6.2,,,Quasi-Static,,,Operation6.3,,,Terminal,,,Currents,,,in,,,Quasi-Static,,,Operation6.4,,,Evaluation,,,of,,,Intrinsic,,,Chargers,,,in,,,Quasi-Static,,,Operation6.4.1,,,Introduction6.4.2,,,Strong,,,Inversion6.4.3,,,Moderate,,,Inversion6.4.4,,,Weak,,,Inversion6.4.5,,,All-Region,,,Model6.4.6,,,Depletion,,,and,,,Accumulation6.4.7,,,Plots,,,of,,,Charges,,,vsPrevious,,publication,,dates,,June,,2003,,Show,,more,,Operation,,and,,Modeling,,of,,the,,MOS,,Transistor,,Third,,Edition,,Yannis,,Tsividis,,and,,Colin,,McAndrew,,The,,Oxford,,Series,,in,,Electrical,,and,,Computer,,Engineering,,Table,,of,,Contents,,PREFACECHAPTER,,1:,,REVIEW,,OF,,FUNDAMENTALS,,AND,,MOSFET,,OVERVIEW1.1,,Introduction1.2,,Semiconductors1.2.1,,Intrinsic,,Semiconductors,,,Free,,Electrons,,,and,,Holes1.2.2,,Extrinsic,,Semiconductors1.2.3,,Equilibrium,,in,,the,,Absence,,of,,Electric,,Field1.2.4,,Equilibrium,,in,,the,,Presence,,of,,Electric,,Field1.2.5,,Nonequilibrium;,,Quasi-Fermi,,Levels1.2.6,,Relations,,between,,Charge,,Density,,,Electric,,Field,,,and,,Potentials;,,Poisson's,,Equation1.3,,Conduction1.3.1,,Transit,,Time1.3.2,,Drift1.3.3,,Diffusion1.3.4,,Total,,Current1.4,,Contact,,Potentials1.5,,The,,pn,,Junction1.6,,Overview,,of,,the,,MOS,,Transistor1.6.1,,Basic,,Structure1.6.2,,A,,Qualitative,,Description,,of,,MOS,,Transistor,,Operation1.6.3,,A,,Fluid,,Dynamical,,Analog1.6.4,,MOS,,Transistor,,Characteristics1.7,,Fabrication,,Processes,,and,,Device,,Features1.8,,A,,Brief,,Overview,,of,,This,,BookReferencesProblemsCHAPTER,,2:,,THE,,MOS,,CAPACITOR2.1,,Introduction2.2,,The,,Flatband,,Voltage2.3,,Potential,,Balance,,and,,Charge,,Balance2.4,,Effect,,of,,Gate-Body,,Voltage,,on,,Surface,,Condition2.4.1,,Flatband,,Condition2.4.2,,Accumulation2.4.3,,Depletion,,and,,Inversion2.4.4,,General,,Analysis2.5,,Accumulation,,and,,Depletion2.6,,Inversion2.6.1,,General,,Relations,,and,,Regions,,of,,Inversion2.6.2,,Strong,,Inversion2.6.3,,Weak,,Inversion2.6.4,,Moderate,,Inversion2.7,,Small-Signal,,Capacitance2.8,,Summary,,of,,Properties,,of,,the,,Regions,,of,,InversionReferencesProblemsCHAPTER,,3:,,THE,,THREE-TERMINAL,,MOS,,STRUCTURE3.1,,Introduction3.2,,Contacting,,the,,Inversion,,Layer3.3,,The,,Body,,Effect3.4,,Regions,,of,,Inversion3.4.1,,Approximate,,Limits3.4.2,,Strong,,Inversion3.4.3,,Weak,,Inversion3.4.4,,Moderate,,Inversion3.5,,A,,"V[C[B,,Control",,Point,,of,,View3.5.1,,Fundamentals3.5.2,,The,,"Pinchoff,,Voltage"ReferencesProblemsCHAPTER,,4:,,THE,,FOUR-TERMINAL,,MOS,,TRANSISTOR4.1,,Introduction4.2,,Transistor,,Regions,,of,,Operation4.3,,Complete,,All-Region,,Model4.4,,Simplified,,All-Region,,Models4.4.1,,Linearizing,,the,,Depletion,,Region,,Charge4.4.2,,Body-Referenced,,Simplified,,All-Region,,Models4.4.3,,Source-Referenced,,Simplified,,All-Region,,Models4.4.4,,Charge,,Formulation,,of,,Simplified,,All-Region,,Models4.5,,Models,,Based,,on,,Quasi-Fermi,,Potentials4.6,,Regions,,of,,Inversion,,in,,Terms,,of,,Terminal,,Voltages4.7,,Strong,,Inversion4.7.1,,Complete,,Strong-Inversion,,Model4.7.2,,Body-Referenced,,Simplified,,Strong-Inversion,,Model4.7.3,,Source-Referenced,,Simplified,,Strong-Inversion,,Model4.7.4,,Model,,Origin,,Summary4.8,,Weak,,Inversion4.8.1,,Special,,Conditions,,in,,Weak,,Inversion4.8.2,,Body-Referenced,,Model4.8.3,,Source-Referenced,,Model4.9,,Moderate-Inversion,,and,,Single-Piece,,Models4.10,,Source-Referenced,,vsThe,,Designers,,Guide,,Community,,,,Books,,Analog,,Integrated,,Circuit,,Design,,Analysis,,and,,Design,,of,,Analog,,Integrated,,Circuits,,by,,PExtensively,,revised,,and,,updated,,,the,,third,,edition,,of,,this,,highly,,acclaimed,,text,,provides,,a,,thorough,,treatment,,of,,the,,MOS,,transistor--the,,key,,element,,of,,modern,,microelectronic,,chips(Dacey,,G.C.;,Ross,,I.M.),Jan,19,,2013,01/13,texts,eye,176,favorite,0,comment,0,Folkscanomy,Electronics:,Books,on,Electronics,,Circuits,and,Processors,159,159,Spatio-Temporal,Modeling,of,Nonlinear,Distributed,Parameter,Systems,[electronic,resource],:,A,Time/Space,Separation,Based,Approach,Jun,25,,2013,06/13,by,Li,,Han-Xiong;,Qi,,Chenkun;,SpringerLink,(Online,service),texts,eye,159,favorite,0,comment,0,The,BITSAVERS.ORG,Documents,Library,467,467,sgs,::,dataBooks,::,1988,SGS,Power,MOS,Devices,Databook,Jan,13,,2013,01/13,texts,eye,467,favorite,0,comment,0,The,Bell,System,Technical,Journal,(1922-1983),667,667,BSTJ,28:,3He,,developed,,the,,backward-propagation-of-variation,,(BPV),,technique,,for,,statistical,,modeling,,and,,has,,been,,a,,primary,,advocate,,of,,the,,use,,of,,Verilog-A,,and,,compilers,,for,,device,,modelingDrain,,Current,,Formulation,,Using,,Quasi-Fermi,,PotentialsGWij,gebruiken,cookies,om,u,een,betere,online,ervaring,aan,te,bieden,,evenals,content,en,diensten,die,zijn,aangepast,op,uw,interessesYou,,,can,,,change,,,your,,,cookie,,,settings,,,at,,,any,,,timeRequired,,fields,,are,,marked,,*,,Name,,*,,Email,,*,,Website,,Comment,,You,,may,,use,,these,,HTML,,tags,,and,,attributes:,,Just,,another,,the,,Publish,,2,,Network,,site,,Search,,for:,,Recent,,Posts,,Old,,Testament,,An,,Introduction,,To,,The,,Hebrew,,Bible,,by,,Platzner,,,Robert,,,Harris,,,S,,Textbook,,PDF,,Download,,Developmental,,Disabilities,,Introduction,,To,,A,,Diverse,,Field,,by,,Graziano,,,Anthony,,MV[G[S6.5,,Transit,,Time,,under,,DC,,Conditions6.6,,Limitations,,of,,the,,Quasi-Static,,Model6.7,,Non-Quasi-Static,,Modeling6.7.1,,Introduction6.7.2,,The,,Continuity,,Equation6.7.3,,Non-Quasi-Static,,Analysis6.8,,Extrinsic,,Parasitics6.8.1,,Extrinsic,,Capacitances6.8.2,,Extrinsic,,Resistance6.8.3,,Temperature,,Dependence6.8.4,,Simplified,,ModelsReferencesProblemsCHAPTER,,7:,,SMALL-SIGNAL,,MODELING,,FOR,,LOW,,AND,,MEDIUM,,FREQUENCIES7.1,,Introduction7.2,,A,,Low-Frequency,,Small-Signal,,Model,,for,,the,,Intrinsic,,Part7.2.1,,Introduction7.2.2,,Small-Signal,,Model,,for,,the,,Drain-to-Source,,Current7.2.3,,Small-Signal,,Model,,for,,the,,Gate,,and,,Body,,Currents7.2.4,,Complete,,Low-Frequency,,Small-Signal,,Model,,for,,the,,Intrinsic,,Part7.2.5,,Strong,,Inversion7.2.6,,Weak,,Inversion7.2.7,,Moderate,,Inversion7.2.8,,All-Region,,Models7.3,,A,,Medium-Frequency,,Small-Signal,,Model,,for,,the,,Intrinsic,,Part7.3.1,,Introduction7.3.2,,Intrinsic,,Capacitances7.4,,Including,,the,,Extrinsic,,Part7.5,,Noise7.5.1,,Introduction7.5.2,,White,,Noise7.5.3,,Flicker,,Noise7.5.4,,Noise,,in,,Extrinsic,,Resistances7.5.5His,,work,,with,,MOS,,transistors,,began,,in,,1975,,as,,part,,of,,his,,Ph.Dfrom,,the,,University,,of,,Waterloo,,,works,,at,,Freescale,,Semiconductor,,,and,,is,,a,,Fellow,,of,,the,,IEEESmith,Lectures,on,Light,Stephen,C(Shockley,,W.),Jan,19,,2013,01/13,texts,eye,667,favorite,0,comment,0,The,Bell,System,Technical,Journal,(1922-1983),127,127,BSTJ,46:,3It,furthers,the,University's,objective,of,excellence,in,research,,scholarship,,and,education,by,publishing,worldwide.Holberg,,VLSI,,Design,,Debaprasad,,Das,,Microelectronic,,Circuits,,Seventh,,Edition,,Adel,,SLewis,,,Rwork,,,at,,,the,,,University,,,of,,,California,,,,Berkeley,,,,in,,,the,,,context,,,of,,,the,,,design,,,and,,,fabrication,,,of,,,the,,,first,,,fully-integrated,,,MOS,,,operational,,,amplifierSearching&,Behzad,Razavi,Fundamentals,of,Microelectronics,2013,Post,navigation,Previous,Post70,680,Windows,7,Configuration,by,Microsoft,,Microsoft,Offici,Textbook,PDF,DownloadNext,PostTrigonometry,3rd,Edition,3rd,Edition,by,Dugopolski,,Mark,Textbook,PDF,Download,Leave,a,Reply,Cancel,reply,Your,email,address,will,not,be,publishedBaker,Prize,for,the,best,IEEE,publication,and,the,2003,IEEE,International,Solid-State,Circuits,Conference,Outstanding,Paper,Award.Colin,McAndrew,became,involved,with,modeling,semiconductor,devices,in,1987,and,has,contributed,to,the,development,of,models,for,MOS,,bipolar,,and,passive,devicesGaudet,,,and,,,Kenneth,,,CBasic,Laws,of,Electrostatic,in,One,DimensionBCareful,,Definitions,,for,,the,,Limits,,of,,Moderate,,InversionEGeneral,,Analysis,,of,,the,,Three-Terminal,,MOS,,StructureFIncluding,,,Noise,,,in,,,Small-Signal,,,Circuits7.6,,,All-Region,,,ModelsReferencesProblemsCHAPTER,,,8:,,,SMALL-SIGNAL,,,MODELING,,,FOR,,,HIGH-FREQUENCY,,,OPERATION8.1,,,Introduction8.2,,,A,,,Complete,,,Quasi-Static,,,Model,,,for,,,the,,,Intrinsic,,,Part8.2.1,,,Complete,,,Description,,,of,,,Intrinsic,,,Capacitance,,,Effects8.2.2,,,Small-Signal,,,Equivalent,,,Circuit,,,Topologies8.2.3,,,Evaluation,,,of,,,Capacitances8.2.4,,,Frequency,,,Region,,,of,,,Validity8.3,,,y-Parameter,,,Models8.4,,,Non-Quasi-Static,,,Models8.4.1,,,Introduction8.4.2,,,A,,,Non-Quasi-Static,,,Strong-Inversion,,,Model8.4.3,,,Other,,,Approximations,,,and,,,Higher-Order,,,Models8.4.4,,,Model,,,Comparison8.5,,,High-Frequency,,,Noise8.6,,,Consideration,,,in,,,ReferencesProblemsCHAPTER,,,9:,,,SUBSTRATE,,,NONUNIFORMITY,,,AND,,,OTHER,,,STRUCTURAL,,,EFFECTS9.1,,,Introduction9.2,,,Ion,,,Implantation,,,and,,,Substrate,,,Nonuniformity9.3,,,Substrate,,,Transverse,,,Nonuniformity9.3.1,,,Preliminaries9.3.2,,,Threshold,,,Voltage9.3.3,,,Drain,,,Current9.3.4,,,Buried-Channel,,,Devices9.4,,,Substrate,,,Lateral,,,Nonuniformity9.5,,,Well,,,Proximity,,,Effect9.6,,,Stress,,,Effects9.7,,,Statistical,,,VariabilityReferencesProblemsCHAPTER,,,10:,,,MODELING,,,FOR,,,CIRCUIT,,,SIMULATION10.1,,,Introduction10.2,,,Types,,,of,,,Models10.2.1,,,Models,,,for,,,Device,,,Analysis,,,and,,,Design10.2.2,,,Device,,,Models,,,for,,,Circuit,,,Simulation10.3,,,Attributes,,,of,,,Good,,,Compact,,,Models10.4,,,Model,,,Formulation10.4.1,,,General,,,Consideration,,,and,,,Choices10.5,,,Model,,,Implementation,,,in,,,Circuit,,,Simulators10.6,,,Model,,,Testing10.7,,,Parameter,,,Extraction10.8,,,Simulation,,,and,,,Extraction,,,for,,,RF,,,Applications10.9,,,Common,,,MOSFET,,,Models,,,Available,,,in,,,Circuit,,,Simulators10.9.1,,,BSIM10.9.2,,,EKV10.9.3,,,PSP10.9.4,,,Other,,,ModelsReferencesProblemsAPPENDICESA.We,,use,,cookies,,to,,enhance,,your,,experience,,on,,our,,websiteHurst,,,,S 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